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讨论了4GHz GaAsFET低噪声集成放大器的直流及微波电路设计,介绍了不同的直流偏压电路和微波电路结构。最后给出了用国产CX51型GaAsFET制作的4GHz(4.1~4.4GHz)低噪声放大器的测试结果。这种两级放大器的噪声系数NF≤2.5dB(包括内部微带隔离器),功率增益Ga≥20dB。
The design of DC and microwave circuit of 4GHz GaAsFET low noise integrated amplifier is discussed. Different DC bias circuits and microwave circuits are introduced. Finally, the test results of 4GHz (4.1 ~ 4.4GHz) LNA made with domestic CX51 GaAsFETs are given. This two-stage amplifier noise factor NF ≤ 2.5dB (including the internal microstrip isolators), power gain Ga ≥ 20dB.