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采用原子层沉积方法(ALD)分别以H2O、H2O2和O3为氧源制备ZnO薄膜,研究不同氧源对ZnO薄膜生长速率、成分、晶体结构及电学性能的影响。结果表明,采用不同氧源均能实现ZnO薄膜的ALD自限制生长,所制备ZnO薄膜均具有垂直于衬底表面的c轴择优取向。与采用H2O2和H2O为氧源制备的ZnO薄膜相比,XRD和XPS测试证实O3为氧源制备薄膜的晶体质量和Zn/O原子较高;相应的Hall测试表明其电阻率最低为0.053Ω.cm,此时载流子浓度为4.8×1018cm-3,Hall迁移率为24.5 cm2/Vs。
ZnO films were prepared by atomic layer deposition (ALD) using H2O, H2O2 and O3 as oxygen sources respectively, and the effects of different oxygen sources on the growth rate, composition, crystal structure and electrical properties of ZnO thin films were studied. The results show that the ALD self-limiting growth of ZnO films can be achieved by using different oxygen sources. The ZnO thin films prepared by this method all have the preferred c-axis orientation perpendicular to the substrate surface. Compared with the ZnO thin films prepared by using H2O2 and H2O as oxygen source, the XRD and XPS tests confirmed that the crystal quality and the Zn / O atomic ratio of O3 were the highest. The corresponding Hall test showed the lowest resistivity of 0.053Ω. cm at which time the carrier concentration was 4.8 × 10 18 cm -3 and the Hall mobility was 24.5 cm 2 / Vs.