采用电弧炉熔炼、球磨、放电等离子烧结(SPS)的方法合成了名义配比为Ba8Ga16-xCuxSi30(x=0,2)的第I类笼状化合物。研究了Cu对Ga的替代对材料结构以及热电性能的影响。结果表明,相比于Ba8Ga16Si30,Cu的掺杂使得样品的晶格常数减小,热导率降低,Seebeck系数的绝对值增大,ZT值有明显的升高。另外工艺条件的微小变化也对材料结构和性能有影响。 A class I cage compound with the nominal composition of Ba8Ga16-xCuxSi30 (x = 0,2) was synthesized by electric arc furnace melting, ball milling and spark plasma sintering (SPS). The effect of Cu substitution on Ga on the structure of the material and the thermoelectric properties was investigated. The results show that compared with Ba8Ga16Si30, the doping of Cu decreases the lattice constant, the thermal conductivity decreases, the absolute value of Seebeck coefficient increases and the ZT value increases obviously. In addition minor changes in process conditions also have an effect on the material’s structure and properties.