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在理论分析设计的基础上，进行了ＧａＡｓ／ＧａＡｌＡｓ定向耦合器型行波调制器实验。建立了器件行波电极微波特性的测试系统，由此系统进行实验确定器件最佳结构参数，完成器件的制作。器件采用共平面行波电极，击穿电压２８Ｖ。用１．０６μｍＹＡＧ激光器进行测试，开关电压８．５Ｖ。由微波网络分析仪测试器件行波电极的微波特性，测得电极中微波与波导中光波间的速率失配小于３％，且在３０ＧＨｚ下，微波传输损耗小于３０ｄＢ，表明器件的３ｄＢ调制带宽超过３２ＧＨｚ
Based on the theoretical analysis and design, a GaAs / GaAlAs directional coupler traveling wave modulator experiment was carried out. The test system of the microwave characteristic of the traveling wave electrode of the device is established. The system conducts the experiment to determine the optimum structural parameters of the device and completes the fabrication of the device. The device uses a coplanar traveling wave electrode, breakdown voltage 28V. With 1.06μm YAG laser test, the switching voltage of 8.5V. The microwave network analyzer is used to test the microwave characteristics of the traveling wave electrodes. The rate mismatch between the microwaves and the waveguides in the electrodes is less than 3%, and the microwave transmission loss is less than 30 dB at 30 GHz, indicating that the 3dB modulation bandwidth of the device exceeds 32GHz