自从Yamauchi等人报导了ZnS:Mn存贮效应以来,对于这种薄膜电致发光器件已进行了不少工作。Suzuki等人,曾报告这种器件的稳定发光状态可以靠瞬时的电压增加也可以靠紫外光入射来开关。 如果写入的基本机理是在ZnS体内产生足够数量的电子—空穴对,那么在降低EL的阈值时电子的轰击应能使器件起动。为了检验这一概念,我们把器件安置在如图1所 Much work has been done on such thin film electroluminescent devices since the memory effect of ZnS: Mn has been reported by Yamauchi et al. Suzuki et al., Have reported that the stable luminescence state of such devices can be switched by instantaneous voltage increase or by UV light incidence. If the underlying mechanism of writing is to generate a sufficient number of electron-hole pairs in the ZnS body, bombardment of the electrons at the EL threshold should cause the device to start. To test this concept, we place the device in Figure 1