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主要研究了采用高温AlN缓冲层外延生长GaN/Si(111)材料的工艺技术。利用高分辨X射线双晶衍射(HRXRD)分析研究了GaN/Si(111)样品外延层的应变状态和晶体质量,通过原子力显微镜(AFM)分析研究了不同厚度的高温AlN缓冲层对GaN外延层的表面形貌的影响。实验结果表明,AlN缓冲层生长前预通三甲基铝(TMAl)的时间、AlN缓冲层的厚度对GaN外延层的应变状态、外延层的晶体质量以及表面形貌都有显著影响。得到最优的预辅Al时间为10s,AlN缓冲层的厚度为40nm。在此条件下外延生长的GaN样品(厚度约为1μm)表面形貌较好,X射线衍射(XRD)双晶摇摆曲线半峰全宽(FWHM)(0002)面和(10-12)面分别为452″和722″。
The technology of epitaxial growth of GaN / Si (111) material by high temperature AlN buffer layer is mainly studied. The strain state and crystal quality of GaN / Si (111) epitaxial layer were studied by HRXRD analysis. The effects of high temperature AlN buffer layer with different thicknesses on the growth of GaN epitaxial layer were investigated by atomic force microscopy (AFM) The effect of surface morphology. The experimental results show that the time of pretreatment of TMAl and the thickness of AlN buffer layer have significant influence on the strain state of GaN epitaxial layer, the crystal quality of epitaxial layer and the surface morphology of AlN buffer layer. The optimal pre-auxiliary Al time was 10s and the thickness of AlN buffer layer was 40nm. The surface morphology of epitaxial GaN samples with a thickness of about 1 μm is better than that of the FWHM (0002) and (10-12) planes of X-ray diffraction (XRD) For 452 “and 722”.