Five-fold twinned nanostructures are intrinsically strained or relaxed by extended defects to satisfy the space-fillingrequirement. Although both of metallic and semiconductor five-fold twinned nanostructures show inhomogeneity in their cross-sectional strain distribution, the evident strain concentration at twin boundaries in the semiconductor systems has been found in contrast to the metallic systems. Naturally, a problem is raised how the chemical bonding characteristics of various five-fold twinned nanosystems affects their strain-relieving defect structures. Here using three-dimensional (3D) electron diffraction mapping methodology, the intrinsic strain and the strain-relieving defects in a pentagonal Ag nanowire and a star-shaped boron carbide nanowire, both of them have basically equal radial twin-plane width about 30 nm, are non-destructively characterized. The non-uniform strain and defect distribution between the five single crystalline segments are found in both of the five-fold twinned nanowires. Diffraction intensity fine structure analysis for the boron carbide five-fold twinned nanowire indicates the presence of high-density of planar defects which are responsible for the accommodation of the intrinsic angular excess. However, for the Ag five-fold twinned nanowire, the star-disclination strain field is still present, although is partially relieved by the formation of localized stacking fault layers accompanied by partial dislocations. Energetic analysis suggests that the variety in the strain-relaxation ways for the two types of five-fold twinned nanowires could be ascribed to the large difference in shear modulus between the soft noble metal Ag and the superhard covalentcompound boron carbide.