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Bi_(1-x)Tb_xFeO_3 thin films were prepared on SnO_2(fluorine doped tin oxide) substrates by a sol—gel method.The structural and electrical properties of the BiFeO_3 thin films were characterized and tested.The results indicated that the diffraction peak of the Tb-doped BiFeO_3 films was shifted towards right as the doping amounts were increased.The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase.The Bi_(0.89)Tb_(0.11)FeO_3 thin film showed the well-developed P—E loops,which enhanced remnant polarization(Pr = 88.05 μC/cm~2) at room temperature.The dielectric constant and dielectric loss of Bi_(0.89)Tb_(0.11)FeO_3 thin film at 100 kHz were 185 and 0.018,respectively.Furthermore,the Bi_(0.89)Tb_(0.11)FeO_3 thin film showed a relatively low leakage current density of 2.07 × 10~(-5) A/cm~2 at an applied electric field of 150 kV/cm.The Xray photoelectron spectroscopy(XPS) spectra indicated that the presence of Fe~(2+) ions in the Bi_(0.89)Tb_(0.11)FeO_3thin film was less than that in the pure BiFeO_3.
Bi 1- (1-x) Tb_xFeO_3 thin films were prepared on SnO_2 (fluorine doped tin oxide) substrates. The structural and electrical properties of the BiFeO_3 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFeO_3 films was shifted towards the right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal / orthorhombic phase. The Bi_ (0.89) Tb_ (0.11) FeO_3 thin film showed the well-developed P-E (0.89) Tb_ (0.11) FeO_3 thin film at 100 kHz were 185 and 0.018, respectively.Furthermore, The Bi_ (0.89) Tb_ (0.11) FeO_3 thin film showed a relatively low leakage current density of 2.07 × 10 ~ (-5) A / cm ~ 2 at an applied electric field of 150 kV / cm.The Xray photoelectron spectroscopy ) spectra indicates that the presence of Fe ~ (2+) ions in the Bi_ (0.89) Tb_ (0.11) FeO_3 thin film was less than that in the pure BiFeO_3.