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提出了一种320×256红外焦平面阵列读出电路的原理及电路设计,采用直接注入的单元电路,在给定的单元面积内可以获得较大的积分电容。相关的320×256阵列读出电路已经在0.5μm双层多晶三层铝N阱CMOS工艺线上实现,整体芯片的面积为9.0 mm×11.2 mm。实测结果表明芯片在常温和低温77 K时都工作正常,工作频率大于5 MHz,整电路的功耗为48 mW左右,动态范围是75 dB,噪声电压为0.5 mV。
A principle and circuit design of a 320 × 256 infrared focal plane array readout circuit are proposed. With the direct injection of the unit circuit, a large integral capacitance can be obtained within a given cell area. The associated 320 × 256 array readout circuitry has been implemented on a 0.5μm dual-poly three-layer aluminum N-well CMOS process line with an overall chip area of 9.0mm × 11.2mm. The measured results show that the chip is working at 77 K at normal temperature and low temperature. The operating frequency is more than 5 MHz. The power consumption of the whole circuit is about 48 mW. The dynamic range is 75 dB and the noise voltage is 0.5 mV.