以电气传感器用单晶硅为对象,研究其在TMAH溶液中的腐蚀现象,分析化学腐蚀条件下单晶硅的微观形貌演化。结果表明,在TMAH溶液中腐蚀后,单晶硅的倒金字塔结构中有刻蚀坑出现,且随着腐蚀时间的延长,倒金字塔结构的体积增大。单晶硅(111)晶面和(110)晶面的交界处出现的腐蚀畸变和硅原子密排结构的变化,是提高(111)面腐蚀速率的主要原因。 The single-crystal silicon for electrical sensors was used to study the corrosion of single-crystal silicon in TMAH solution and the evolution of single-crystal silicon under the condition of chemical etching. The results show that after the etching in TMAH solution, the etching pit appears in the inverted pyramid structure of single crystal silicon, and the volume of inverted pyramid structure increases with the increase of etching time. The main reason for increasing the (111) surface corrosion rate is the corrosion distortion and the silicon atom close-packed structure at the interface between the (111) crystal plane and the (110) crystal plane.