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用正电子湮没和扰动角关联二种方法研究了Si和Nb的辐射损伤。采用正电子湮没方法得到的结果与扰动角关联的完全一致。
The damage of Si and Nb irradiated by positron annihilation and perturbation angle was studied. The results obtained using positron annihilation are in good agreement with the perturbation angles.