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利用射频磁控反应溅射技术,制备了氮掺杂的SiO2纳米薄膜.发现N掺杂SiO2体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35emu/cm3和75Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO2体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献.
N-doped SiO2 nano-films were prepared by radio-frequency magnetron reactive sputtering and found that the N-doped SiO2 nano-films were ferromagnetic, and the smaller distribution of Si3N4 in the SiO2 matrix was beneficial to the magnetic ordering . When the substrate temperature is 400 ℃, the sample films have the maximum saturation magnetization and coercive force of 35emu / cm3 and 75Oe respectively.The magnetic properties of the films may be generated at the interface between silicon nitride and silicon oxide.The theoretical calculations show that, The N-doped SiO2 system has a net spin, while the orbital moment caused by the charge transfer between the silicon nitride and the silicon oxide interface also contributes to the magnetism of the sample.