用普通扫描电子显微镜 (ＳＥＭ)只能观测样品的表面形貌 ,不能观测到隐藏在表面绝缘层下面的半导体材料和集成电路的微结构。在普通的ＳＥＭ中安装了我们研制成功的透表面检测仪后就可以突破普通的ＳＥＭ只能观测样品表面形貌的限制 ,透过表面绝缘层透视到下面的半导体材料的缺 The scanning electron microscope (SEM) can only observe the surface morphology of the sample, and can not observe the microstructure of the semiconductor material and the integrated circuit hidden under the surface insulating layer. In a normal SEM we have successfully developed a breakthrough through the surface detector can break through ordinary SEM can only observe the sample surface topography through the surface of the insulation layer through to the following lack of semiconductor materials