霍尔系数和直流电导率是固体薄膜的主要电特性参数．我们测量了Ｐ－型Ｐｂ１－ｘＣｄｘＴｅ薄膜的霍尔系数和直流电导率，实验表明其禁带宽度和电子迁移率随镉组分ｘ的增大而增加．ｘ的增大在薄膜中增加了碲空位，该空位起施主杂质作用．在低温范围电离散射占优势，在较高温度声子散射限制了载流子迁移率 Hall coefficient and DC conductivity are the main electrical characteristics of solid films. We measured the Hall coefficient and the DC conductivity of a P-type Pb1-xCdxTe thin film. Experiments show that the bandgap and electron mobility increase with the increase of cadmium component x. The increase of x increases the tellurium vacancy in the film, which acts as a donor impurity. Ionization scattering is dominant at low temperatures, and phonon scattering limits carrier mobility at higher temperatures