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基于硅-蓝宝石(SOS)和砷化镓工艺基础上的单片微波集成电路已被认真地考虑为卫星通讯系统、空用雷达和其它应用方面的富有生命力的候选者。蓝宝石和半绝缘GaAs衬底的低损耗特性与金属-半导体FET(MESFET)优良的微波特性相结合,第一次真正使单片发展到微波集成电路。所谓单片,我们是指用某种淀积方法将所有的无源和有源电路元件以及它们的互连都做在本体材料内或在衬底的表面上,这样的淀积方法有外延、离子注入、溅射、蒸发等。这项研制工作的重要性在于最终使诸如空用相控阵系统那样一些微波应用的价格实惠,这些系统具有大量相同的电路并且要求体积小、重量轻。本文详细地报导了一些设计考虑,通常单片微波电路必须应用这些设计考虑,特别是砷化镓电路更是如此。强调了计算机辅助设计技术的重要作用,介绍了许多阐明设计原则的单片电路和部件的例子,从而提供了在此领域中遍及全球的工作概况,并一瞥了单片微波电路的发展前景。
Monolithic microwave integrated circuits based on silicon-sapphire (SOS) and gallium arsenide processes have been seriously considered as viable candidates for satellite communications systems, spaceborne radars and other applications. The combination of the low loss characteristics of sapphire and semi-insulating GaAs substrates and the excellent microwave characteristics of metal-semiconductor FETs (MESFETs) make it the first truly monolithic development of microwave integrated circuits. By monolithic, we mean that all of the passive and active circuit components and their interconnections are made in or on the surface of the substrate by some deposition method. Such deposition methods are epitaxial, Ion implantation, sputtering, evaporation and the like. The importance of this development is ultimately to make it affordable for some microwave applications such as empty phased array systems that have a large number of identical circuits and require small size and light weight. This article reports some design considerations in detail. Often, these design considerations must be applied to a monolithic microwave circuit, especially for gallium arsenide circuits. Emphasized the important role of CAD techniques and introduced many examples of monolithic circuits and components illustrating design principles, providing a working overview throughout the world in this area and a glimpse of the future of monolithic microwave circuits.