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ZnO作为一种宽带隙半导体材料 ,近几年来已经成为国际上紫外半导体光电子材料和器件领域的研究热点。激光分子束外延 (L MBE)系统是获得器件级ZnO外延薄膜的先进技术之一。高质量精密ZnO陶瓷靶材对于该工艺的实施是十分关键的 ,本文中采用高纯原料 ,在洁净条件下制备了大面积、薄片型、尺寸可控的符合理想化学配比的高纯ZnO陶瓷靶材。采用所制备的靶材 ,利用L MBE技术在 (0 0 0 1)蓝宝石基片上进行了ZnO薄膜的外延生长 ,在 2 80℃～ 30 0℃低温条件下所生长的薄膜样品具有 (0 0 0 1)取向的纤锌矿晶体结构 ,薄膜光学性能良好 ,论文中对ZnO薄膜的低温L MBE生长机理进行了探讨。
As a kind of wide bandgap semiconductor material, ZnO has been the hotspot in the field of UV semiconductor optoelectronic materials and devices in recent years. The laser molecular beam epitaxy (L MBE) system is one of the advanced technologies for obtaining device-level ZnO epitaxial thin films. High quality and precision ZnO ceramic target material is very crucial for the implementation of the process. In this paper, high purity raw materials are used to prepare high purity ZnO ceramics with large area, flake size and controlled size in accordance with ideal chemical ratio Target. Using the prepared target, the epitaxial growth of ZnO thin films was carried out on the (0 0 0 1) sapphire substrate by using L MBE technique. The thin films grown under the low temperature of 280 ℃ ~ 300 ℃ have the characteristics of (0 0 0 1) orientation of the wurtzite crystal structure, good optical properties of the film, the paper ZnO film LMBE growth mechanism was discussed.