基于对实验和理论的分析，提出一种异质结量子点隧穿（ＨＱＤ）模型，并导出了纳米硅薄膜电导率完整的表达式．其主要思想是，纳米硅薄膜中的微晶粒（几个纳米大小）具有量子点特征，在微晶粒与界面之间由于两者能隙的差异构成晶间势垒，这类似于多晶硅中经常使用的晶间势垒模型（ＧＢＴ）．考虑到量子点中的单电子隧穿特征，认为纳米硅薄膜中的电传导是由微晶粒中电子弹道式输运与单电子越过势垒的隧穿构成的．这就是ＨＱＤ模型的主要内容，理论结果与实验相符 Based on the experimental and theoretical analysis, a heterojunction quantum dot tunneling (HQD) model is proposed and the complete expression of the conductivity of the nano-silicon film is derived. The main idea is that the microcrystal grains (a few nanometers in size) in the nanosilver film have quantum dot characteristics, and the intergranular barrier forms between the microcrystal grains and the interface due to the difference in energy gap therebetween, which is similar to that in polycrystalline silicon Frequently used intergranular barrier model (GBT). Taking into account the single-electron tunneling characteristics in quantum dots, it is considered that the electrical conduction in the nanosilver thin film is caused by electron-ballistic transport in the crystallite and tunneling of single electrons across the barrier. This is the main content of the HQD model, the theoretical result is consistent with the experiment