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CMOS图像传感芯片除了可见光对红外非可见光波也有反应,在890～980纳米范围内其灵敏度比CCD图像传感芯片的灵敏度要高出许多,并随波长增加而衰减的梯度也慢一些。如能设计制造1微米(1000纳米)到2～
CMOS image sensor chip in addition to visible light on the infrared non-visible light also has a response in the range of 890 ~ 980 nm sensitivity than the CCD image sensor chip to be much higher, and with increasing wavelength attenuation of the gradient is also slower. If you can design and manufacture of 1 micron (1000 nm) to 2 ~