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利用高分辨X射线衍射方法,分析了在LiAlO2(100)面上采用金属有机化学气相沉积生长的m面GaN薄膜的微观结构和位错。采用对称面扫描和非对称面扫描等方法研究了晶面倾转角、面内扭转角、横向和垂直关联长度等,由此得到螺位错和刃位错密度。考虑到m面GaN的各向异性,将〈0001〉晶向定义为0°方向,与之垂直的方向为90°方向,分别按0°和90°两个不同方向进行X射线衍射的研究。0°方向和90°方向螺位错密度分别为1.97×1010、7.193×109cm-2,0°方向螺位错密度较大;0°和90°方向刃位错密度分别为3.23999×1010、7.35068×1010cm-2,90°方向刃位错密度较大,显示了非极性GaN薄膜各向异性的特征。
The microstructure and dislocations of m-plane GaN films grown on metal-organic chemical vapor deposition on LiAlO2 (100) surface were analyzed by high resolution X-ray diffraction. The dislocation angle and the dislocation density of the blade were obtained by using the methods of symmetry plane scanning and asymmetric plane scanning. Considering the anisotropy of the m-plane GaN, the <0001> crystal orientation is defined as the 0 ° direction, and the direction perpendicular thereto is the 90 ° direction. The X-ray diffraction is studied in two different directions of 0 ° and 90 °, respectively. The dislocation densities in 0 ° and 90 ° directions were 1.97 × 1010 and 7.193 × 109 cm-2, respectively. The dislocation densities in the 0 ° and 90 ° directions were 3.23999 × 1010 and 7.35068, respectively × 1010cm-2, 90 ° direction edge dislocation density is larger, showing the characteristics of non-polar GaN film anisotropy.