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利用透射电镜研究了热氧化过程中含氮 (NCZ)和不含氮 (CZ)直拉硅单晶的氧化诱生缺陷 .研究表明 ,NCZ中的氧化诱生层错的尺寸随着湿氧氧化时间的延长而减小 ,并有冲出型位错产生 .而在CZ中 ,生成了大量的多面体氧沉淀 ,并且随着热氧化时间的延长 ,层错的尺寸逐渐增大
The oxidation induced defects of nitrogen-containing (NCZ) and non-nitrogen-containing (CZ) Czochralski silicon single crystals during thermal oxidation were investigated by transmission electron microscopy. The results show that the size of oxide-induced layer faults in NCZ increases with the oxidation of moisture The time is prolonged and there are punching dislocations.And in CZ, a large number of polyhedral oxygen precipitates are formed, and the size of the stacking faults gradually increases with the increase of thermal oxidation time