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用热丝 CVD的方法在 3英寸的硅衬底上生长均匀的金刚石薄膜, 应用了在热丝上方加石 墨电极,在形核阶段相对于热丝施加一直流负偏压的预处理方法,使金刚石的成核密度达到 1010- 1011/cm2。在 3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜 ,生长的薄膜用 SEM及喇曼光 谱进行了测试。实验发现电极的位置是影响金刚石薄膜均匀性的重要因素。
A hot diamond CVD method is used to grow a uniform diamond film on a 3-inch silicon substrate. A pre-treatment method of applying a graphite electrode above the hot filament and applying a DC negative bias relative to the hot filament during the nucleation stage is employed The nucleation density of diamond reaches 1010-1011 / cm2. Flat diamond films were prepared on a 3-inch mirror-polished silicon substrate and the grown films were tested by SEM and Raman spectroscopy. The experiment found that the location of the electrode is an important factor affecting the uniformity of the diamond film.