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采用耗尽型MOS场效应晶体管(MOSFET)作为负载元件的含意已有认识,且提出了某些器件结构。然而在一个片子上同时制作增强型及耗尽型两种MOSFET是难行的。本文描述采用N型沟道增强型及耗尽型MOSFET的新颖的高速集成电路。集成电路的剖面图示于图1。增强型MOSFET具有一覆盖在热生长二氧化硅的三氧化二铝层来作为栅绝缘物。其阈值电压可由改变二氧化硅与三氧化二铝层的厚度比(SiO_2/Al_2O_3)来控制,直到+1伏、+5伏电源电压均能工作时,这些增强型MOSFET的电
The use of depletion-mode MOS field-effect transistors (MOSFETs) as load cells has been recognized and some device structures have been proposed. However, it is hard to make both enhanced and depleted MOSFETs on the same film at the same time. This article describes a novel high-speed integrated circuit using N-channel enhancement and depletion mode MOSFETs. A cross-sectional view of the integrated circuit is shown in FIG. 1. The enhancement MOSFET has a layer of aluminum oxide overlying the thermally grown silicon dioxide as a gate insulator. The threshold voltage can be controlled by changing the thickness ratio (SiO 2 / Al 2 O 3) of the silicon dioxide to the aluminum oxide layer until the + 1V and + 5V supply voltages can be operated. The power of these enhanced MOSFETs