相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品,Ge2Sb2Te5(GST)作为一种传统相变材料已经被广泛应用在相变存储器中,而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用.本工作综述了有关GST的化学机械抛光技术研究进展,讨论了GST化学机械抛光过程的影响因素,如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等,并对目前GST的化学机械抛光机理进行了归纳,进一步展望了GST的化学机械抛光技术的发展前景. Phase change memory is regarded as the most mainstream product of next generation memory due to its advantages of nonvolatility, high speed and low power consumption. As a traditional phase change material, Ge2Sb2Te5 (GST) has been widely used in phase change memory , And GST chemical mechanical polishing as phase change memory production of key processes has been adopted.This work reviewed the GST chemical mechanical polishing technology research progress, discusses the GST chemical mechanical polishing process factors, such as the following pressure, speed , Polishing pad, abrasive, oxidizer, surfactant and so on. The current chemical mechanical polishing mechanism of GST is summarized, and the prospect of chemical mechanical polishing technology of GST is prospected further.