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介绍了一种采用DECR等离子体在低温下制备高质量SiO2薄膜的PECVD工艺。讨论了DECRPECVD工艺中气相O／Si原子比以及沉积速率对SiO2薄膜性能的影响。采用包括高能离子分析、椭偏仪、化学刻蚀以及红外吸收谱等物理和化学方法，对所镀SiO2薄膜的各种理化特性进行了分析和研究。在此基础上，还采用准静态I-U和高、低频C-U技术对优化工艺后的SiO2薄膜进行了电学性能测试，并在最后给出了采用DECRSiO2的薄膜晶体管的特性曲线。
A PECVD process for preparing high quality SiO2 thin films by using DECR plasma at low temperature is presented. The effects of gas phase O / Si atomic ratio and deposition rate on the properties of SiO2 thin films during DECRPECVD process are discussed. Physical and chemical methods, including high-energy ion analysis, ellipsometry, chemical etching and infrared absorption spectroscopy, were used to analyze and study the various physical and chemical properties of the SiO2 film. On this basis, the quasi-static I-U and high-frequency and low-frequency C-U technology are also used to test the electrical performance of the optimized SiO2 thin film. Finally, the characteristic curve of the thin film transistor using DECRSiO2 is given.