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用无电电镀的化学方法,在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源,在550℃下退火若干小时,可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物,晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT,获得了良好的器件特性.
By electroless plating, a nickel inducing source is formed on the surface of the amorphous silicon thin film obtained by VHF-PECVD deposition and annealed at 550 ° C for several hours to induce the generation of micron-sized polycrystalline silicon grains. The source can be uniformly distributed on the surface of the amorphous silicon film The amount of nucleation on the amorphous silicon film depends on the concentration of the nickel solution, the pH, the time of electroless plating, etc. When the nucleation density is relatively low, Radial crystallization phenomenon.Using VHF-PECVD amorphous silicon film as a crystallization precursor, the maximum grain size of polycrystalline silicon can reach 90μm after crystallization.With this polycrystalline silicon prototype TFT, good device characteristics were obtained.