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向InSb和Hg_(1-x)Cd_xTe等窄能隙体料半导体试料施加强磁场H,如果使电流密度为J的电流垂直流过,那么电子和空穴就在J×H方向激励,被J×H力非平均地激励成高能状态。其结果,由于过剩浓度的电子和空穴的复合、产生与其能隙ε_g基本相等波长的红外辐射。J×H的激励—增强,在室温下也能进行脉冲激光振荡。特别是量子极限磁场时,放大增益增大,即使连续波(CW)工作时也能观测感生辐射。另外,因为其辐射波长受施加磁场控制,所以,希望这种磁红外发光二极管能作为波长可变红外光源及光放大器(激光器)使用。
A strong magnetic field H is applied to the narrow bandgap semiconductor material such as InSb and Hg_ (1-x) Cd_xTe. If a current of current density J is made to flow perpendicularly, electrons and holes are excited in the J × H direction, J × H forces non-uniformly excited into a high-energy state. As a result, infrared radiation having a wavelength substantially equal to its energy gap ε_g is generated due to the recombination of excess concentration of electrons and holes. J × H excitation - enhanced, at room temperature can also be pulsed laser oscillation. Especially when the quantum magnetic field is limited, the amplification gain increases, and the induced radiation can be observed even in the continuous wave (CW) operation. In addition, because its radiation wavelength is controlled by the applied magnetic field, it is desirable that such a magnetic infrared light-emitting diode be used as a wavelength-variable infrared light source and an optical amplifier (laser).