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SRAM型FPGA在空间辐照环境下,容易受到单粒子效应的影响,导致FPGA存储单元发生位翻转,翻转达到一定程度会导致功能错误。为了评估FPGA对单粒子效应的敏感程度和提高FPGA抗单粒子的可靠性,对实现故障注入的关键技术进行了研究,对现有技术进行分析,设计了单粒子翻转效应敏感位测试系统,利用SRAM型FPGA部分重配置特性,采用修改FPGA配置区数据位来模拟故障的方法,加速了系统的失效过程,实现对单粒子翻转敏感位的检测和统计,并通过实验进行验证,结果表明:设计合理可行,实现方式灵活,成本低,为SRAM型FPGA抗单粒子容错设计提供了有利支持。
SRAM-type FPGA in space irradiation environment, vulnerable to the impact of single-particle effects, resulting in a FPGA memory cell bit flip, flip to a certain extent will lead to functional errors. In order to evaluate the sensitivity of FPGAs to single-particle effects and improve the reliability of FPGAs, the key technologies to achieve fault injection are studied. The existing technologies are analyzed and a single-particle flip-effect sensitive bit test system is designed. SRAM FPGA partial reconfiguration of the characteristics of the FPGA configuration area to modify the data bits to simulate the failure of the method to speed up the process of failure of the system to achieve a single particle flip sensitive bit detection and statistics and verified by experiments that the results show that: Reasonable and feasible, flexible and low cost, which provide good support for the single FPGA fault tolerant design of SRAM type FPGA.