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利用高性能红外图像系统开发了工作波段为８～１０μｍ的混合型４８０×２元的锑镉贡（ＨｇＣｄＴｅ）红外焦平面阵（ＩＲＦＰＡ）。所用光电二极管阵在截止波长１０．５μｍ时，具有平均零偏压电阻３．８ＭΩ，分流电阻１００ＭΩ以上的特性。Ｓｉ信号读出电路的输入端具有分离和分割功能。处理电荷量为４×１０７电子以上。试制的ＩＰＦＰＡ的特性为在８０Ｋ工作时，用Ｆ／１．２光学系统，平均灵敏度为６．４×１０１０ｃｍＨｚ１／２／Ｗ。
A hybrid 480 × 2 HgCdTe infrared focal plane array (IRFPA) with working wavelength range of 8 ~ 10μm was developed with high performance infrared imaging system. The photodiode array used had an average zero bias resistance of 3.8 MΩ and a shunt resistance of 100 MΩ or more at a cutoff wavelength of 10.5 μm. The input of the Si signal readout circuit has the function of separation and division. The amount of charge handled is 4 × 107 electrons or more. The characteristics of the prototype IPFPA were 80 / F operation with an F / 1.2 optical system with an average sensitivity of 6.4 × 1010 cmHz1 / 2 / W.