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面向非制冷红外成像的低成本高性能应用,二极管原理的红外焦平面阵列的设计和工艺实现得到研究和发展。焦平面和读出电路的设计集成以及CMOS和MEMS工艺集成是此项技术的研究重点。基于SOI的二极管原理焦平面阵列在低成本的利用CMOS工艺实现大规模阵列集成方面有很大的优势。读出电路是基于标准CMOS工艺进行设计的。320×240规模的焦平面阵列利用CMOS标准工艺和MEMS工艺集成已经得到了结构实验结果。研究并测得二极管像元的正向压降的温度变化率约为-1.5 mV/K。分析和实验证明了二极管原理非制冷红外焦平面阵列的设计和工艺可行性,是一项可以低成本广泛应用的红外成像技术。
For uncooled infrared imaging of low-cost high-performance applications, diode-based infrared focal plane array design and process technology to be studied and developed. The design integration of the focal plane and readout circuitry and the integration of CMOS and MEMS processes are the focus of this technology. SOI-BASED DIODE PRINCIPLES Focal Plane Arrays have great advantages in the cost-effective implementation of large-scale array integration using CMOS technology. The readout circuit is based on a standard CMOS process. The 320 × 240-scale focal plane array has been structurally tested using CMOS standard and MEMS process integration. The temperature change rate of the forward voltage drop of the diode pixel was measured and measured to be about -1.5 mV / K. Analysis and experiment proved that the diode principle uncooled infrared focal plane array design and process feasibility, is a widely used low-cost infrared imaging technology.