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结合化学水浴法和真空电子束热蒸发法在玻璃衬底上制备了含有不同厚度Pr掺杂层的CdS多晶薄膜,并对薄膜的结构、表面形貌和光电特性进行了研究。结果表明,未掺杂的CdS薄膜为沿[111]晶向择优生长的立方相闪锌矿结构,导电类型为N型。Pr掺杂并未改变CdS薄膜的物相结构和择优取向,但衍射峰强度增加;掺Pr后CdS薄膜的晶粒尺寸增大,致密性提高,并且薄膜在可见光范围内的透过率增加,光学带隙变大。同时还发现CdS中掺Pr后影响了薄膜的电学性能,掺杂浓度较低时CdS薄膜电阻率增大,掺杂浓度较高时薄膜的电阻率降低并且导电类型由N型转变为P型。
CdS polycrystalline thin films with different thickness Pr doped layers were prepared on glass substrates by chemical bath method and vacuum electron beam thermal evaporation method. The structure, surface morphology and photoelectric properties of the films were studied. The results show that undoped CdS film is a cubic phase sphalerite that preferentially grows along [111] crystal orientation, and the conductivity type is N type. Pr doping did not change the phase structure and preferred orientation of CdS thin films, but the intensity of the diffraction peaks increased. The grain size of CdS thin films increased with increasing Pr, the compactness increased and the transmittance of thin films increased in visible light range. Optical bandgap becomes larger. At the same time, it was also found that the electrical properties of CdS films were affected by the doping of CdS. The electrical resistivity of CdS films increased when the doping concentration was low. The resistivity of CdS films decreased with the doping concentration and the conductivity type changed from N type to P type.