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利用二维器件模拟软件MEDICI对AlGaAs InGaAs GaAs赝配高电子迁移晶体管器 (PHEMT)件进行了仿真 ,研究了PHEMT器件的掺杂浓度与电子浓度分布 ,PHEMT器件内部的电流走向及传输特性 ,重点研究了不同温度和不同势垒层浓度情况下PHEMT器件的kink效应 .研究结果表明 :kink效应主要与处于高层深能级中的陷阱俘获 反俘获过程有关 ,而不是只与碰撞电离有关
The simulation of AlGaAs InGaAs GaAs pseudomorphic high electron transfer transistor (PHEMT) was carried out by using the two-dimensional device simulation software MEDICI. The doping concentration and electron concentration distribution of PHEMT device, the current direction and transmission characteristics of PHEMT device were studied. The kink effect of PHEMT devices at different temperatures and different barrier concentrations was investigated.The results show that the kink effect is mainly related to the trap trapping and anti-trapping process at higher levels and not to the impact ionization