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本文用雪崩热电子注入技术与MOS C-V技术,研究了软X射线辐照引入于SiO_2中的中性陷阱的性质.给出陷阱俘获截面σ为10~(-15)～10~(-16)cm~2,有效陷阱密度为10~(11)～10~(12)cm~(-2).发现陷阱密度随辐照时间的增加而升高,但很快趋于饱和;陷阱密度并随辐照强度的提高而增大.文中研究了室温及77°K下中性陷阱的俘获特性以及陷阱的解陷作用.还给出了陷阱的退火实验结果.
In this paper, the avalanche hot electron injection technique and MOS CV technique were used to study the properties of neutral traps introduced into SiO_2 by soft X-ray irradiation. The trap trapping cross section σ was given as 10 ~ (-15) ~ 10 ~ (-16) cm ~ 2 and the effective trap density was 10 ~ (11) ~ 10 ~ (12) cm ~ (-2) .The trap density increased with the increase of irradiation time, but soon became saturated. The enhancement of the irradiation intensity and the increase of the trapped traps.The trapping characteristics of the neutral traps at room temperature and 77 ° K and the debonding action of the traps are also studied.The annealing experimental results of the traps are also given.