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自从1965年第一次成功地制备用于微电子学的氮化硅膜以来,对氮化硅膜的制备工艺、结构、性能、使用条件进行了广泛研究。研究最多的问题之一是氧对氮化硅膜的影响。从初期发现氮化硅膜对氧的掩蔽能力,到1968年以来对氧氮化硅膜的大量研究,从70年代对氮化硅膜的氧化性质的观测和探讨,到用各种粒子谱仪对氧沾污的直接分析等等,都是探讨氧对氮化硅膜的作用。 氧对氮化硅膜的作用,通常有两种不同的形式:一种是少量氧在氮化硅膜的形成过程中结合进氮化硅膜,改变膜层的理化性质。另一种是大量氧化剂在氮化硅的使用过程中与之发生由表及里的氧化反应。本文的目的是分别评价这两方面的研究结果。
Since the first successful fabrication of a silicon nitride film for microelectronics in 1965, a wide range of studies have been made on the preparation, structure, performance, and use conditions of the silicon nitride film. One of the most studied issues is the effect of oxygen on the silicon nitride film. From the initial discovery of the silicon nitride film masking ability of oxygen to the silicon oxynitride film since 1968 a large number of studies from the 1970s on the silicon nitride oxide oxidation properties of the observation and discussion of the use of various particle spectrometer Oxygen contamination of the direct analysis, etc., are to explore the role of oxygen on the silicon nitride film. Oxygen on the silicon nitride film, there are usually two different forms: one is a small amount of oxygen in the formation of silicon nitride film into the silicon nitride film, changing the physical and chemical properties of the film. The other is a large number of oxidants in the process of using silicon nitride with the oxidation reaction occurs inside and outside. The purpose of this article is to separately evaluate the findings of both studies.