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分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程,揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律,建立了总剂量辐照条件下的双轴应变Si PMOSFET阈值电压与跨导等电学特性模型,并对其进行了模拟仿真.由仿真结果可知,阈值电压的绝对值会随着辐照总剂量的积累而增加,辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系,高剂量时趋于饱和;辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率,导致了沟道载流子迁移率的退化以及跨导的降低.在此基础上,进行实验验证,测试结果表明实验数据与仿真结果基本相符,为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础.
The microscopic transport of carriers in biaxial strained Si p-type MOSFETs under γ-ray irradiation was analyzed. The mechanism of γ-ray emission and the evolution of device electrical characteristics with the total irradiation dose Law, the model of threshold voltage and transconductance and other electrical characteristics of biaxial strained Si PMOSFET under the condition of total dose irradiation was established and simulated. The simulation results show that the absolute value of threshold voltage will change with the total irradiation Dose accumulation and increase, the lower the total dose of radiation when the threshold voltage changes with the total dose of a linear relationship between the basic, and tends to be saturated at high doses; trap generated by the charge charge increases the channel region between the carrier collision Probability, resulting in degradation of channel carrier mobility and transconductance reduction.On this basis, the experimental verification, the test results show that the experimental data and simulation results are basically consistent for the biaxial strained Si PMOSFET irradiation reliability Research and application of strain integrated circuits and promotion provide theoretical basis and practical basis.