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一、引言锑化铟(InSb)是近年来引起人们极大兴趣并被广泛研究的Ⅲ-Ⅴ族化合物半导体材料。 InSb和锗(Ge)、硅(Si)相比虽是一发现较晚的半导体材料,但自从1952年惠耳克尔(Welker),首先对InSb进行研究之后,十年来对InSb各方面的性能及其应用已做了很多研究工作。这主要是因为:(1)制备高纯度InSb的工艺相对地比较简单,较容易获得其纯度比Ge、Si或其他Ⅲ-Ⅴ族半导性化合物高一、二个数量极的单晶体。(2)由于InSb具有一些显著的
I. INTRODUCTION Indium antimonide (InSb) is a group III-V compound semiconductor material that has drawn great interest and been widely studied in recent years. InSb is a late-found semiconductor material compared to Ge and Si, but since InSb was first studied by Welker in 1952, the performance of various aspects of InSb over the past decade And its application has done a lot of research work. This is mainly because: (1) The process of preparing high-purity InSb is relatively simple and it is easier to obtain a single crystal whose purity is one or two poles higher than that of Ge, Si or other Group III-V semiconductors. (2) Since InSb has some notables