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分析了槽栅器件中的热载流子形成机理 ,发现在三个应力区中 ,中栅压附近热载流子产生概率达到最大 .利用先进的半导体器件二维器件仿真器研究了槽栅和平面PMOSFET的热载流子特性 ,结果表明槽栅器件中热载流子的产生远少于平面器件 ,且对于栅长在深亚微米和超深亚微米情况下尤为突出 .为进一步探讨热载流子加固后对器件特性的其他影响 ,分别对不同种类和浓度的界面态引起的器件栅极和漏极特性的漂移进行了研究 ,结果表明同样种类和密度的界面态在槽栅器件中引起的器件特性的漂移远大于平面器件 .为开展深亚微米和亚 0 1微米新型槽栅CMOS器件的研制奠定了基础 .
The formation mechanism of hot carrier in the trench gate device is analyzed and it is found that the hot carrier generation probability is the maximum in the three stress regions near the gate. Using the advanced semiconductor device 2D device simulator, The results show that hot carrier generation in trench-gate devices is far less than that of planar devices, especially for deep sub-micron and ultra-deep sub-micron gate lengths.In order to further investigate the effect of thermal loading The other effects on the characteristics of the device after the solidification of the flow are investigated respectively. The drift of the gate and drain characteristics caused by different kinds and concentrations of interface states are studied. The results show that the same kind and density of interface states are caused in the trench gate device The drift of device characteristics is much larger than that of planar devices, which lays the foundation for the development of new trench CMOS devices of deep sub-micron and sub-micron.