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本文曾在我们以前欧姆接触工作的基础上,进一步用高硼合金(BAINiIn)和高磷合金(PSbAuIn)作接触金属,适当控制硅片的表面质量,结合电火花技术,简捷地分别使高达20000Ωcm的p型硅和4000Ωcm的n型硅都能得到良好的欧姆接触特性,并且在经过30次从300K到77K往返循环后仍保持线性的I-V特性.本文通过对不同温度的I—V特性、接触电阻率和离子探针的测量,结合金属对硅接触的接触电阻率与掺杂浓度的关系计算,讨论了欧姆接触的形成和载流子输运的特征.本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量.
Based on our previous work on ohmic contacts, this paper further uses BAINiIn and PSbAuIn as contact metals to properly control the surface quality of the wafers. In combination with EDM, Of p-type silicon and 4000Ωcm of n-type silicon can get good ohmic contact characteristics, and after 30 cycles from 300K to 77K linear IV characteristics remain.This paper through the I-V characteristics of different temperatures, the contact The measurement of resistivity and ion probe is based on the calculation of the relationship between the contact resistivity of metal and the doping concentration of silicon and discusses the formation of ohmic contact and the characteristics of carrier transport.The method has been successfully used for high resistance Silicon material impurity compensation degree and carrier mobility measurement.