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在77K下测量了不同阱宽(30-160A)的In_xCa_(1-x)As/GaAs应变量子阱的静压下光致发光谱.静压范围为0-60kbar.发现导带第一子带到重空穴第一子带的激子发光峰的压力系数从 160A阱的 9.74meV/kbat增加到 30A 阱的 10.12meV/kbar.计算表明,阱变窄时电子波函数向压力系数较大的势垒层中的逐步扩展是压力系数随阱宽变小而增加的原因之一.在压力超过50kbar后观察到两个与间接跃迁有关的发光峰.
Static photoluminescence spectra of In_xCa_ (1-x) As / GaAs strained quantum wells with different well widths (30-160 A) were measured at 77 K. The static pressure range was 0-60 kbar. The first subband of the conduction band The pressure coefficient of the exciton luminescence peak in the first subregion of heavy holes increased from 9.74meV / kbat of the 160A well to 10.12meV / kbar of the 30A well. The calculations show that the electron wave function increases toward the larger pressure coefficient The gradual expansion in the barrier layer is one of the reasons for the increase of the pressure coefficient with the decrease of the well width, and two luminescence peaks related to the indirect transition are observed after the pressure exceeds 50 kbar.