掺铬半绝缘磷化铟单晶一般作为衬底材料,用于评价外延工艺生长的外延层质量,也用于制造S—管,栅极场效应管和异质结激光器等器件。最近,砷化镓栅极场效应管取得了显著进展,由于频率高、低电压、低噪声放大等优点,正逐步取代所有的4千兆赫至K频率的低 Chromium-doped semi-insulating indium phosphide single crystal substrate materials generally used to evaluate the epitaxial growth of epitaxial process quality, but also for the manufacture of S-tube, gate FET and heterojunction lasers and other devices. Recently, gallium arsenide gate field effect transistor has made significant progress, due to the advantages of high frequency, low voltage, low noise amplification, and is gradually replacing all 4 GHz to K low frequency