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在刻度Si(Au)面垒半导体探测器过程中观察到241Am标准放射源的的峰道址随入射窗的位置及大小的移动现象。猜测原因可能是Au层镀的不均匀导致电子-空穴对的复合几率增加,但具体原因仍需要进一步分析。由于这对重离子-原子碰撞实验中测量背散射谱极为不利,我们给出解决该问题的方法是固定入射窗的位置及大小,并刻度两套背散射谱仪,其对称放置在靶室内同时测量背散射离子,通过比较便可得到可信的实验结果。
During the calibration of the Si (Au) surface barrier semiconductor detector, the peak position of the 241Am standard radioactive source was observed as a function of the position and size of the incident window. It is speculated that the reason may be uneven Au plating leads to the electron-hole recombination rate increases, but the specific reasons still need further analysis. Since this measurement of backscatter spectra in a heavy ion-atomic collision experiment is extremely unfavorable, we propose a solution to this problem by fixing the position and size of the incident window and calibrating two sets of backscatter spectrometers, symmetrically placed in the target chamber Backscattered ions are measured and credible experimental results are obtained by comparison.