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Topological Weyl semimetal WTe2 with large-scale film form has a promising prospect for new-generation spintronic devices.However,it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical nature.Here we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post annealing.We observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 films.The nontrivial Berry phase can be revealed by Landau fan diagram analysis.The Hall mobility of WTe2 films can reach 1245 cm2 V-1 s-1 and 1423 cm2 V-1 s-1 for holes and electrons with the carrier density of 5 × 1019 cm-3 and 2 × 1019 cm-3,respectively.Our work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.