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A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.
A New method, named atmospheric pressure plasma polishing, for the ultra-smooth machining of the silicon based materials is introduced. Which will then react with the silicon based materials. The reaction product is the vaporization of the SiF4, which can be easily processed. In this way, the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained. An experimental setup is built up , and the SiC polishing experiment is carried out. The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.