本专利提供一种具有高集成密度的热释电器件,这种热释电器件有一块可以非均质刻蚀并可以用作膜片支座的衬底(MT),衬底中安置了一个探测器窗口(DF)。探测器窗口上横跨着一片绝缘膜片(M)。该膜片和探测器窗口上面是一个热释电探测器元件(PDE)。膜片上面还有一层(100)取向的单晶硅层。 This patent provides a pyroelectric device with a high integration density. The pyroelectric device has a substrate (MT) that can be etched inhomogeneously and can be used as a diaphragm carrier. The substrate is provided with a Probe window (DF). A piece of insulating membrane (M) spans the detector window. Above the diaphragm and detector window is a pyroelectric detector element (PDE). The diaphragm also has a layer of (100) oriented monocrystalline silicon.