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采用共溅射氧化法,在普通玻璃衬底上室温直流溅射沉积钒钼金属薄膜,再在大气环境下经热氧化处理获得掺钼VO2薄膜。通过XRD、SEM、热致相变电学特性等分析,研究制备工艺及掺杂改性对掺钼VO2薄膜的微结构、形貌、热滞回线和相变温度的影响。实验与分析结果表明,与相同厚度的纯VO2薄膜相比,钼掺杂显著改变了VO2薄膜的表面形貌特征,掺钼VO2薄膜呈多晶态且沿VO2(002)择优取向生长,结晶性和取向性明显提高,薄膜的相变温度降低至38℃,热滞回线宽度收窄约至8℃。低温共溅射氧化法制备的掺钼VO2薄膜的热阻效应明显,薄膜的金属-半导体相变特性良好。
Co-sputtering oxidation method was used to deposit vanadium-molybdenum metal thin film on normal glass substrate by DC sputtering at room temperature, and then thermal oxidized to obtain molybdenum-doped VO2 thin film under atmospheric environment. The effects of preparation technology and doping modification on the microstructure, morphology, thermal hysteresis loop and phase transition temperature of the molybdenum-doped VO2 thin films were investigated by XRD, SEM and electric induced thermal deformation. The experimental and analytical results show that, compared with the pure VO2 thin film with the same thickness, molybdenum doping significantly changes the surface morphology of the VO2 thin film. The molybdenum-doped VO2 thin film is polycrystalline and grows along the preferred orientation of VO2 (002) And the orientation was significantly improved, the phase transition temperature was reduced to 38 ℃, the width of the thermal hysteresis narrowed to about 8 ℃. The thermal resistance effect of molybdenum-doped VO2 films prepared by low temperature co-sputtering oxidation is obvious, and the metal-semiconductor phase transition characteristics of the films are good.