由于硅平面器件(双极型和场效应器件都是如此)工艺的重要性日益增长,人们对于材料的特性和用来制造这些器件的工艺已作了大量的研究。这种研究取得了许多方面的进展,其中十分重要的一方面是能很好地控制硅表面,从而有可能发展高性能的 MOS 晶体管和集成电路,另外,这方面的研究也导致对于 SiO_2-Si 系统的特性有了很好的了解和应用。 As processes for silicon planar devices (both bipolar and field effect devices) have gained in importance, a great deal of research has been devoted to the material properties and the processes used to make these devices. Many progress have been made in this kind of research. One of the most important aspects of this kind of research is that it can control the silicon surface well, so it is possible to develop high performance MOS transistors and integrated circuits. In addition, System features have a good understanding and application.