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本文介绍了下一代碳化硅(SiC)平面MOSFET、沟槽结构肖特基二极管和沟槽MOSFET器件。首先,开发了SiC平面MOSFET,可以抑制在正向电流通过时引起寄生PN结二极管的劣化。其次,开发了新型沟槽SiC肖特基二极管,与传统SiC二极管相比,在可接受的漏电流条件下,具有更低的正向压降。第三,开发了新型双沟槽结构SiC MOSFET,在保持超低导通电阻的同时提高了器件的可靠性,其主要原因在于新结构有效降低了槽栅底部的最大电场强度,抑制了栅氧的击穿。
This article introduces the next generation silicon carbide (SiC) planar MOSFETs, trench structure Schottky diodes and trench MOSFET devices. First, a SiC planar MOSFET was developed that can suppress the deterioration of a parasitic PN junction diode caused by the passage of a forward current. Second, a new trench SiC Schottky diode has been developed that has a lower forward voltage drop with acceptable leakage current compared to conventional SiC diodes. Thirdly, a new double-trench SiC MOSFET has been developed to improve the reliability of the device while maintaining the extremely low on-resistance. The main reason is that the new structure effectively reduces the maximum electric field strength at the bottom of the trench gate, Breakdown.