辛辛那提大学纳米电子实验室一研究组已用氮化镓基发光二极管的一种替代物产生蓝光。这些装置虽然也是以氮化镓为基础 ,但它们不是发光二极管 ,而是场致发光器件 ,其中铥掺杂剂提供了光。为了制造场致发光器件 ,用分子束取向生长技术 ,在硅的 Ga N缓冲层上种植 1μm厚的掺 Tm G A team at the Nano Electronics Laboratory at the University of Cincinnati has generated blue light as an alternative to gallium nitride-based light-emitting diodes. Although these devices are also based on gallium nitride, they are not light-emitting diodes but electroluminescent devices in which the dopant provides light. To fabricate an electroluminescent device, a 1 μm thick doped TmG was grown on a GaN buffer layer of silicon using molecular beam orientation growth