【摘 要】
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A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazzs 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductor
【机 构】
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Institute of RF-& OE-ICs,School of Information Engineering
论文部分内容阅读
A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazzs 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage, the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB, the input and output reflectance are less than -24dB and -10dB, respectively, and the maximal output power is 23.5 dBm. At output power of 23.1 dBm, the PAE (power added efficiency) is 30.2%, the IMD2 and IMD3 are less than -32 dBc and -46 dBc, respectively. The chip size is 1.27mm×0.9mm.
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