【摘 要】
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Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD).Crystalline quality and phase purity are characteriz
【机 构】
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Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing Univers
论文部分内容阅读
Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD).Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements.There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped CaN diluted magnetic semiconductors or nanoscale iron dusters and Fe-N compounds which we have not detected.
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