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为了满足短距离无线高速传输的应用需求,基于SMIC 90 nm 1P9M CMOS工艺,设计了一种可工作在60 GHz的功率放大器(PA).该PA为单端三级级联结构.采用顶层金属方法,设计具有高品质因子的小感值螺旋电感,用于输入、输出和级间匹配电路,以提高电路的整体性能.通过减少传输损耗和输出匹配损耗,提高了附加功率效率.仿真结果表明,在1.2V电源电压下,该PA的功率增益为17.2 dB,1 dB压缩点的输出功率为8.1 dBm,饱和输出功率为12.1dBm,峰值功率附加效率为1S.7％,直流功耗为70 mW.各性能指标均满足60 GHz通信系统的要求.,In order to meet the applications of short distance high speed wireless transmission communication systems,a 60 GHz high efficiency single-ended power amplifier was designed in SMIC 90 nm 1P9M CMOS technology.It adopted a single-ended three-stage cascade structure.The on-chip spiral inductor with small inductance and high quality factor was designed with the top metal layer,which could be used as the passive circuit for input,output and inter-stage impedance matching network,and the overall performance of the PA was improved.The additional power efficiency could be increased by reducing the transmission losses and output matching losses.The simulation results showed that the PA’s power gain was 17.2 dB,the output power was 8.1 dBm at 1 dB compression point,the saturated output power was 12.1 dBm,the peak power additional efficiency was 15.7％ and the DC power consumption was 70 mW at 1.2 V voltage supply.